MT3S111TU,LF

Toshiba Semiconductor and Storage

Product No:

MT3S111TU,LF

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Package:

UFM

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Description:

RF SIGE NPN BIPOLAR TRANSISTOR N

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Mfr	Toshiba Semiconductor and Storage
Gain	12.5dB
Series	-
Package	Tape & Reel (TR)
Power - Max	800mW
Mounting Type	Surface Mount
Package / Case	3-SMD, Flat Lead
Product Status	Active
Transistor Type	NPN
Base Product Number	MT3S111
Operating Temperature	150°C (TJ)
Frequency - Transition	10GHz
Supplier Device Package	UFM
Noise Figure (dB Typ @ f)	0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Current - Collector (Ic) (Max)	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 30mA, 5V
Voltage - Collector Emitter Breakdown (Max)	6V