Definition:
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Chinese name insulated gate bipolar transistor, is composed of BJT(bipolar transistor) and MOS(insulated gate type field effect tube) composite voltage-driven power semiconductor device, combining the high current single-gate control characteristics of MOSFET and the low saturation voltage capability of BJT.
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IGBT can be divided into single tube discrete device, IGBT module and IPM according to package. Usually the IGBT in the market refers to the IGBT module.
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Features:
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IGBT is the core device of energy conversion and transmission, is the "CPU" of power electronic devices, with high voltage, high current, high speed three characteristics, is widely used in AC motor, inverter, switching power supply, lighting circuit, traction drive and other fields. Among them, new energy vehicles are the core application scenarios of IGBT, and IGBT modules account for nearly 10% of the cost of electric vehicles and about 20% of the cost of charging piles.
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At present, the world's leading IGBT suppliers are Infineon, Fuji Electric, Mitsubishi Electric, ON, Toshiba and so on.
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Development trend:
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First, IGBT devices will continue to develop in the direction of groove gate structure, fine graphics, carrier injection enhanced modulation and lamination processing technology
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Second, the IGBT module technology will be improved around the back of the chip welding and fixing and the front electrode interconnection, and combined with advanced packaging technology. In addition, more integration is also the development direction of IGBT, to reduce the size of the product and integrate more functional components within the module.

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